The working principle of MOS transistor in power management chip IC
Time:2020-03-04
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The working principle of MOS transistor in power management chip IC: MOS transistor, which is an insulating field-effect transistor in integrated circuits, has the same conductive mechanism as low-power MOS transistor, but has significant differences in structure, thus having high input resistance.
The working principle of MOS transistor (using N-channel enhanced MOS field-effect transistor) is to use VGS to control the amount of "induced charges", in order to change the condition of the conductive channels formed by these "induced charges", and then achieve the purpose of controlling the drain current. When manufacturing pipes, a large number of positive ions are present in the insulation layer through the process, so a large amount of negative charges can be induced on the other side of the interface. These negative charges connect the N region of high permeability impurities, forming a conductive channel, and even at VGS=0, there is a large drain current ID. When the gate voltage changes, the amount of induced charge in the channel also changes, and the width of the conductive channel also changes accordingly. Therefore, the drain current ID changes with the change of the gate voltage.
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